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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q
VDSS = ID25 = RDS(on) =
trr 250 ns
1000 V 15 A 0.7
TO-247 AD (IXFH)
Maximum Ratings 1000 1000 20 30 15 60 15 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 TO-247 TO-264 TO-247 TO-268 TO-264 V V V V A A A mJ J V/ns W C C C C
G D S
(TAB)
TO-268 (D3) ( IXFT)
G S
TO-264 AA (IXFK)
D (TAB)
G = Gate S = Source
TAB = Drain
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 4 10 g g g Features IXYS advanced low Qg process International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 200 TJ = 25C TJ = 125C 50 2 0.7 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
V GS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2001 IXYS All rights reserved
98627A (9/01)
IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 12 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 150 28 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 (External), 27 67 14 130 170 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 31 67 0.35 TO-247 TO-264 0.25 0.15 S
1 2 3
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
pF pF pF ns ns ns ns nC nC nC K/W K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 60 1.5 250 A A V ns C A
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS -di/dt = 100 A/s, VR = 100 V 1 9
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
TO-268 Outline
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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